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SCTH70N120G2V-7 |
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| Part Number | SCTH70N120G2V-7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
RDS(on) max.
ID
SCTH70N120G2V-7
1200 V
30 mΩ
90 A
• Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Source sensing pin for increased efficiency Applications • Switching mode power supply • DC-DC converters • Industrial motor control Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independ... |
| Document |
 SCTH70N120G2V-7 Data Sheet
PDF 373.17KB |
| Distributor | Stock | Price | Buy |
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