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CTH2503NS-T52 |
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| Part Number | CTH2503NS-T52 |
| Manufacturer | CT Micro |
| Description | The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored ... |
| Features |
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications Powe... |
| Document |
 CTH2503NS-T52 Data Sheet
PDF 1.02MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CTH2506NS-T52 |
CT Micro |
N-Channel MOSFET |
|
| 2 | CTH214 |
CT Micro |
Phototransistor Optocoupler |
|
| 3 | CTH217 |
CT Micro |
Phototransistor Optocoupler |
|
| 4 | CTH217A |
CT Micro |
Phototransistor Optocoupler |
|
| 5 | CTH217B |
CT Micro |
Phototransistor Optocoupler |
|