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SCTH35N65G2V-7 |
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| Part Number | SCTH35N65G2V-7 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and ... |
| Features |
Order code
VDS
SCTH35N65G2V-7
650 V
• Very fast and robust intrinsic body diode • Low capacitance Applications • Switching mode power supply • EV chargers • DC-DC converters RDS(on) typ. 55 mΩ ID 45 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction ... |
| Document |
 SCTH35N65G2V-7 Data Sheet
PDF 613.37KB |
| Distributor | Stock | Price | Buy |
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| 1 | SCTH35N65G2V-7AG |
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| 5 | SCTH40N120G2V7AG |
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