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SCTHS300N75G3AG |
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| Part Number | SCTHS300N75G3AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature ... |
| Features |
Order code
23
SCTHS300N75G3AG
VDS 750 V
RDS(on) typ. 6.5 mΩ
ID 300 A
• AEC-Q101 qualified 1 • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Application • Main inverter (electric traction) NG3DS2PS1D4 Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and v... |
| Document |
 SCTHS300N75G3AG Data Sheet
PDF 284.68KB |
| Distributor | Stock | Price | Buy |
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