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AFSEMI |
N-Channel Enhancement Mode MOSFET VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8 450mR@1V5 General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device part |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A Applications Load Switch DCDC conversion NB battery Pin configuration General Description Bottom View This device is produced with high cell density, DMOS trench technology, |
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AFSEMI |
Dual P-Channel Enhancement Mode MOSFET VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A Applications Load Switch DCDC conversion NB battery Pin configuration General Description Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench te |
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AFSEMI |
N-Channel Enhancement Mode MOSFET VDS 30V VGS ±20V RDSon TYP 14 mR@10V 20mR@4V5 ID 18A General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM application |
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AFSEMI |
Dual P-Channel Enhancement Mode MOSFET VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A Applications Li Battery Charging; High Side DC/DC Converter; Load Switch; Power Management in Portable, Battery Powered Devices Pin configuration Top View General |
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AFSEMI |
N-Channel Enhancement Mode MOSFET Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 9A E-tool; E-Toy; Motor Driver General Description Pin Configuration SSC8062GT8 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitabl |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS VGS RDSon TYP 51mR@-10V ID Applications Load Switch Portable Devices DCDC conversion -30V ±12V 60mR@-4V5 98mR@-2V5 -4A Pin configuration General Description Top View This device is particularly suited for low voltage appli |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS -20V VGS ±12V RDSon TYP 21mR@-4V5 26mR@-2V5 35mR@-1V8 45mR@-1V5 ID -6.5A Applications Load Switch Portable Devices DCDC conversion Charging Driver for Relay,Solenoid,Motor,LED etc. General Description This device is produced |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS VGS -20V ±8V RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5 ID ESD -4A 3kV Applications Load Switch Portable Devices DCDC Conversion Pin configuration Top View D General Description This device uses advanced trench technology |
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AFSEMI |
Dual N-Channel Enhancement Mode MOSFET Applications Inverter; VDS VGS RDSon TYP ID 30V ±20V 16mR@10V 20mR@4V5 9A Pin configuration General Description Top View This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV Applications Load Switch Portable Devices DCDC Conversion Pin configuration Top View D General Description This device uses advanced trench techno |
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AFSEMI |
N-Channel Enhancement Mode MOSFET PNP Transistor VCE VBE -40V -6V VCESATMAX -500mV IC -1.0A Applications Li Battery Charging Pin configuration General Description SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and |
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AFSEMI |
TVS Diodes 400W peak pulse power (TP = 8/20μs) SMA Package Working voltage: 5V-440V Low clamping voltage Low capacitance RoHS compliant transient protection for high speed data lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact) For surface mounted |
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AFSEMI |
TVS Diodes 400W peak pulse power (TP = 8/20μs) SMA Package Working voltage: 5V-440V Low clamping voltage Low capacitance RoHS compliant transient protection for high speed data lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact) For surface mounted |
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AFSEMI |
N-Channel Enhancement Mode MOSFET VDS VGS 30V ±12V RDSon TYP 24mR@10V 27mR@4V5 39mR@2V5 ID 6A General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is s |
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AFSEMI |
N-Channel Enhancement Mode MOSFET VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8 General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particul |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS -30V VGS ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID -5.4A Applications Load Switch DCDC conversion TFT panel power switch Pin configuration General Description Top View This device is produced with high cell density, DMOS trench t |
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AFSEMI |
P-Channel Enhancement Mode MOSFET VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A Applications Load Switch DCDC conversion NB battery Pin configuration General Description Top View This device is produced with high cell density, DMOS trench technology, wh |
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AFSEMI |
Surface Mount Unidirectional and Bidirectional Transient Voltage Suppressors Voltage Range 12V-170V 5000W peak pulse power Dissipation For surface mounted applications Reliable low cost construction utilizing molded plastic technique Response Time is Typically < 1 ns Uni-direction, less than 5.0ns for Bi-directio |
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AFSEMI |
TVS Diodes 400W peak pulse power (TP = 8/20μs) SMA Package Working voltage: 5V-440V Low clamping voltage Low capacitance RoHS compliant transient protection for high speed data lines to IEC61000-4-2(ESD)±15kV(air),±8kV(contact) For surface mounted |
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