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SSC8125GS6A |
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| Part Number | SSC8125GS6A |
| Manufacturer | AFSEMI |
| Description | This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitabl... |
| Features |
VDS VGS -20V ±8V
RDSon TYP 36mR@-4V5 45mR@-2V5 57mR@-1V8 66mR@-1V5
ID ESD -4A 3kV
Applications Load Switch Portable Devices DCDC Conversion Pin configuration Top View D General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications. Package Information GS SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8125GS6A Absolute Maximum Ratings @ TA = 25°C unless other... |
| Document |
 SSC8125GS6A Data Sheet
PDF 114.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8125GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8120GN1 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8120GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8120GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8120GS9 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|