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SSC8039GQ4 |
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| Part Number | SSC8039GQ4 |
| Manufacturer | AFSEMI |
| Description | Bottom View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage pow... |
| Features |
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications Load Switch DCDC conversion NB battery Pin configuration General Description Bottom View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information SSC-1V0 Package: DFN3X3 http://www.afsemi.com 1/5 Analog Future SSC8039GQ4 Absolute Maxi... |
| Document |
 SSC8039GQ4 Data Sheet
PDF 417.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8039GS1 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8039GT3 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8039GT4 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8039GT8 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|