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SSC8039GS1 |
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| Part Number | SSC8039GS1 |
| Manufacturer | AFSEMI |
| Description | Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power... |
| Features |
VDS -30V
VGS ±20V
RDSon TYP 15mR@-10V 20mR@-4V5
ID -10A
Applications Load Switch DCDC conversion NB battery Pin configuration General Description Top View This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8039GS1 Ab... |
| Document |
 SSC8039GS1 Data Sheet
PDF 332.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8039GQ4 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8039GT3 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8039GT4 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8039GT8 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8030GN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|