SSC8P20AN2 |
Part Number | SSC8P20AN2 |
Manufacturer | AFSEMI |
Description | SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP Transistor . The tiny and thin outline saves PCB consumption. Package In... |
Features |
PNP Transistor
VCE VBE -40V -6V
VCESATMAX -500mV
IC -1.0A
Applications Li Battery Charging Pin configuration General Description SSC8P20AN2 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP Transistor . The tiny and thin outline saves PCB consumption. Package Information Top View SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8P20AN2 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 V Drain Current... |
Document |
SSC8P20AN2 Data Sheet
PDF 653.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | SSC8P22AN3 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
2 | SSC8P22CN2 |
AFSEMI |
N-Channel Enhancement Mode MOSFET | |
3 | SSC8PN0GN2 |
AFSEMI |
High Frequency High Gain PNP Power BJT | |
4 | SSC8013GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET | |
5 | SSC8013GSB |
AFSEMI |
P-Channel Enhancement Mode MOSFET |