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SSC8020GS9 |
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| Part Number | SSC8020GS9 |
| Manufacturer | AFSEMI |
| Description | This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for batt... |
| Features |
VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8 450mR@1V5 General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications Replace Digital Transistor Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Pin Configuration Top View Package Information SSC-V1.0 http://ww... |
| Document |
 SSC8020GS9 Data Sheet
PDF 120.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSC8020GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 2 | SSC8020GS8 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 3 | SSC8022GS6 |
AFSEMI |
N-Channel Enhancement Mode MOSFET |
|
| 4 | SSC8023GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|
| 5 | SSC8025GS6 |
AFSEMI |
P-Channel Enhancement Mode MOSFET |
|