WNM6001 - Will Semiconductor

WNM6001 N-Channel MOSFET

The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6001 is Pb-free and Halogen-free. WNM6001 Http//:www.sh-willsemi.com SOT-23 D 3 12 GS F.

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Extremely Low Threshold Voltage
 Small package SOT-23 Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging Pin configuration (Top view) 3 W61
* 12 W61 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNM6001-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd.