The WNM07N65/WNM07N65F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM07N65/WNM07N65F Features 650V@TJ=25°C .
650V@TJ=25°C
Typ.RDS(on)=1.0 Ω
Low gate charge
100% avalanche tested
100% Rg tested
D
GDS
TOT-O22- 0
FG S
GD S
TO-220F
WNM07N65
CC Y W
=Devices code = Special Code =Year =Week
WNM07N65F =Devices code CC = Special Code Y =Year
W =Week
Order Information
Device
Package
WNM07N65_3/T
TO-220
WNM07N65F_3/T
TO-220-F
Units/Tube 50 50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM07N65
WNM07N65F
Drain-Source Voltage Gate-Source Voltage
TC=25°C Continuous Drain Current
TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM07N60 |
Will Semiconductor |
N-Channel MOSFET | |
2 | WNM07N60F |
Will Semiconductor |
N-Channel MOSFET | |
3 | WNM07N65F |
Will Semiconductor |
N-Channel MOSFET | |
4 | WNM01N10 |
WillSEMI |
MOSFET | |
5 | WNM01N11 |
WillSEMI |
MOSFET | |
6 | WNM05N60 |
WillSEMI |
MOSFET | |
7 | WNM05N60F |
WillSEMI |
MOSFET | |
8 | WNM12N65 |
Will Semiconductor |
N-Channel MOSFET | |
9 | WNM12N65F |
Will Semiconductor |
N-Channel MOSFET | |
10 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET | |
11 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET | |
12 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET |