The WNM07N60/WNM07N60F is N-Channel enhancement MOS Field Effect Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications. WNM07N60/WNM07N60F Features 600V@TJ=25°C .
600V@TJ=25°C
Typ.RDS(on)=1.0 Ω
Low gate charge
100% avalanche tested
100% Rg tested
D
GDS
TOT-O22- 0
G S
GD S
TO-220F
WNM07N60 =Devices code
Y Y =Year WW =Week
WNM07N60F =Devices code
Y Y =Year WW =Week
Order Information
Device
Package
WNM07N60_3/T
TO-220
WNM07N60F_3/T TO-220-F
Units/Tube 50 50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM07N60
WNM07N60F
Drain-Source Voltage Gate-Source Voltage
TC=25°C Continuous Drain Current
TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy C
VDS 600 VGS ±30
7 ID
4.8
600.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM07N60 |
Will Semiconductor |
N-Channel MOSFET | |
2 | WNM07N65 |
Will Semiconductor |
N-Channel MOSFET | |
3 | WNM07N65F |
Will Semiconductor |
N-Channel MOSFET | |
4 | WNM01N10 |
WillSEMI |
MOSFET | |
5 | WNM01N11 |
WillSEMI |
MOSFET | |
6 | WNM05N60 |
WillSEMI |
MOSFET | |
7 | WNM05N60F |
WillSEMI |
MOSFET | |
8 | WNM12N65 |
Will Semiconductor |
N-Channel MOSFET | |
9 | WNM12N65F |
Will Semiconductor |
N-Channel MOSFET | |
10 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET | |
11 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET | |
12 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET |