The WNM6002 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6002 is Pb-free and Halogen-free. WNM6002 Http//:www.sh-willsemi.com SOT-323 D 3 12 GS .
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package SOT-323
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Pin configuration (Top view)
3
62
*
1
2
62 = Device Code
* = Month (A~Z)
Marking
Order information
Device
Package
Shipping
WNM6002-3/TR SOT-323 3000/Reel&Tape
Will Semiconductor.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM6001 |
Will Semiconductor |
N-Channel MOSFET | |
2 | WNM01N10 |
WillSEMI |
MOSFET | |
3 | WNM01N11 |
WillSEMI |
MOSFET | |
4 | WNM05N60 |
WillSEMI |
MOSFET | |
5 | WNM05N60F |
WillSEMI |
MOSFET | |
6 | WNM07N60 |
Will Semiconductor |
N-Channel MOSFET | |
7 | WNM07N60F |
Will Semiconductor |
N-Channel MOSFET | |
8 | WNM07N65 |
Will Semiconductor |
N-Channel MOSFET | |
9 | WNM07N65F |
Will Semiconductor |
N-Channel MOSFET | |
10 | WNM12N65 |
Will Semiconductor |
N-Channel MOSFET | |
11 | WNM12N65F |
Will Semiconductor |
N-Channel MOSFET | |
12 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET |