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WNM6001 |
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| Part Number | WNM6001 |
| Manufacturer | Will Semiconductor |
| Description | The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC... |
| Features |
Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Applications Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Pin configuration (Top view) 3 W61* 12 W61 = Device Code * = Month (A~Z) Marking Order information Device Package Shipping WNM6001-3/TR SOT-23 3000/Reel&Tape Will Semiconductor Ltd... |
| Document |
 WNM6001 Data Sheet
PDF 1.28MB |
| Distributor | Stock | Price | Buy |
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