WNM01N10 - WillSEMI

WNM01N10 MOSFET

The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM01N10 is Pb-free and Halogen-free. WNM01N10 Http://www.sh-willsemi.com D S G SOT-23 D 3 .

Features

 Trench Technology
 Supper high density cell design
 Excellent ON resistance for higher DC current
 Small package SOT-23 Applications
 Driver for Relay, Solenoid, Motor, LED etc.
 DC-DC converter circuit
 Power Switch
 Load Switch
 Charging NA = Device Code Y = Year W = Week Marking Order information Device Package WNM01N10-3/TR SOT-23 Shipping 3000/Reel&Tape Will Semiconductor Ltd. 1 2016/01/18
  – Rev. 1.2 Absolute Maxim.