R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A) • 4.5 V Gate-drive available • Built-in gate protection diode • Sma.
• VDSS −30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant
Ordering Information
Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2812T1L |
Renesas |
P-channel MOSFEF | |
3 | UPA2813T1L |
Renesas |
P-channel MOSFEF | |
4 | UPA2814T1S |
Renesas |
P-channel MOSFEF | |
5 | UPA2815T1S |
Renesas |
P-channel MOSFEF | |
6 | UPA2816T1S |
Renesas |
P-channel MOSFEF | |
7 | UPA2806 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | UPA2821T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | UPA2826T1S |
Renesas |
N-channel MOSFET | |
10 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |