The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0762EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = −10 V, ID = −30 A) • 4.5 V Gate-drive available • Small & thin type surface mount pack.
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = −10 V, ID = −30 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free
8-pin HVSON(3333)
Ordering Information
Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel
μPA2812T1L-E2-AT
Note:
∗
*1
Package 8-pin HVSON (3333) typ. 0.028 g
1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2811T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2813T1L |
Renesas |
P-channel MOSFEF | |
4 | UPA2814T1S |
Renesas |
P-channel MOSFEF | |
5 | UPA2815T1S |
Renesas |
P-channel MOSFEF | |
6 | UPA2816T1S |
Renesas |
P-channel MOSFEF | |
7 | UPA2806 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | UPA2821T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | UPA2826T1S |
Renesas |
N-channel MOSFET | |
10 | UPA2001C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
11 | UPA2002C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array | |
12 | UPA2003C |
NEC |
NPN Silicon Epitaxial Darlington Transistor Array |