UPA2826T1S - Renesas

UPA2826T1S N-channel MOSFET

The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . R07DS0989EJ0100 Rev.1.00 Dec 25, 2012 Features • VDSS = 20 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A) • 2.5 V Gate-drive available • Small & thin type surface mount package with heat spre.

Features

• VDSS = 20 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 4.3 mΩ MAX. (VGS = 8.0 V, ID = 13.5 A)
• 2.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD PLATING Pure Sn(Tin) PACKING Tape 5000 p/reel HWSON-8 0.022 g TYP. Package μ PA2826T1S-E2-AT∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) 1 .