UPA2821T1L - Renesas

UPA2821T1L MOS FIELD EFFECT TRANSISTOR

The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features • VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A) • 4.5 V Gate-drive available • Small surface mount package (8-pin HVSON (3333)) • Pb-.

Features

• VDSS = 30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
• 4.5 V Gate-drive available
• Small surface mount package (8-pin HVSON (3333))
• Pb-free, Halogen Free Ordering Information Part No. Lead Plating Packing Package μPA2821T1L-E1-AT ∗1 Pure Sn (Tin) Tape 3000 p/reel 8-pin HVSON (3333) μPA2821T1L-E2-AT ∗1 typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (D.