UPA2814T1S - Renesas

UPA2814T1S P-channel MOSFEF

The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0776EJ0101 Rev.1.01 May 28, 2013 Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A) • 4.5 V Gate-drive available • Small & thin type surface mount pack.

Features

• VDSS = −30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 7.8 mΩ MAX. (VGS = −10 V, ID = −24 A)
• 4.5 V Gate-drive available
• Small & thin type surface mount package with heat spreader
• Pb-free and Halogen free HWSON-8 Ordering Information Part No. Lead Plating Pure Sn Packing Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2814T1S-E2-AT Note: ∗ ∗1 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drai.