UPA2806 - Renesas

UPA2806 MOS FIELD EFFECT TRANSISTOR

R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz) • Built-in gate protectio.

Features

• Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)
• Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant Ordering Information Part No. LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to .