UPA2811T1L Renesas MOS FIELD EFFECT TRANSISTOR Datasheet, en stock, prix

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UPA2811T1L

Renesas
UPA2811T1L
UPA2811T1L UPA2811T1L
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Part Number UPA2811T1L
Manufacturer Renesas (https://www.renesas.com/)
Description R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS ...
Features
• VDSS −30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A)
• 4.5 V Gate-drive available
• Built-in gate protection diode
• Small & thin type surface mount package with heat spreader (8-pin HVSON)
• Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source...

Document Datasheet UPA2811T1L Data Sheet
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