UPA2811T1L |
Part Number | UPA2811T1L |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS ... |
Features |
• VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS = −10 V, ID = −19 A) • 4.5 V Gate-drive available • Built-in gate protection diode • Small & thin type surface mount package with heat spreader (8-pin HVSON) • Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source... |
Document |
UPA2811T1L Data Sheet
PDF 242.49KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2812T1L |
Renesas |
P-channel MOSFEF | |
3 | UPA2813T1L |
Renesas |
P-channel MOSFEF | |
4 | UPA2814T1S |
Renesas |
P-channel MOSFEF | |
5 | UPA2815T1S |
Renesas |
P-channel MOSFEF |