UPA2806 Renesas MOS FIELD EFFECT TRANSISTOR Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

UPA2806

Renesas
UPA2806
UPA2806 UPA2806
zoom Click to view a larger image
Part Number UPA2806
Manufacturer Renesas (https://www.renesas.com/)
Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (V...
Features
• Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)
• Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)
• Built-in gate protection diode
• Thin type surface mount package with heat spreader (8-pin HVSON)
• RoHS Compliant Ordering Information Part No. LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to ...

Document Datasheet UPA2806 Data Sheet
PDF 251.54KB
Distributor Stock Price Buy

Similar Datasheet

No. Partie # Fabricant Description Fiche Technique
1 UPA2810
Renesas
MOS FIELD EFFECT TRANSISTOR Datasheet
2 UPA2811T1L
Renesas
MOS FIELD EFFECT TRANSISTOR Datasheet
3 UPA2812T1L
Renesas
P-channel MOSFEF Datasheet
4 UPA2813T1L
Renesas
P-channel MOSFEF Datasheet
5 UPA2814T1S
Renesas
P-channel MOSFEF Datasheet
More datasheet from Renesas



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact