UPA2806 |
Part Number | UPA2806 |
Manufacturer | Renesas (https://www.renesas.com/) |
Description | R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications. Features • Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (V... |
Features |
• Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A) • Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz) • Built-in gate protection diode • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant Ordering Information Part No. LEAD PLATING Pure Sn (Tin) PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ. 0.028 g μ PA2806T1L-E1-AY μ PA2806T1L-E2-AY ∗1 ∗1 Note: ∗1. Pb-free (This product does not contain Pb in external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to ... |
Document |
UPA2806 Data Sheet
PDF 251.54KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2810 |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
2 | UPA2811T1L |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
3 | UPA2812T1L |
Renesas |
P-channel MOSFEF | |
4 | UPA2813T1L |
Renesas |
P-channel MOSFEF | |
5 | UPA2814T1S |
Renesas |
P-channel MOSFEF |