TSM3462 - Taiwan Semiconductor Company

TSM3462 20V N-Channel MOSFET

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Features

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● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application
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● Load Switch PA Switch Ordering Information Part No. TSM3462CX6 RF Package SOT-26 Packing 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS V.