TSM3457 - Taiwan Semiconductor Company

TSM3457 30V P-Channel MOSFET

TSM3457 30V P-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 60 100 Qg 9.52 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information.

Features

● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM3457CX6 RFG SOT-26 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note.