TSM3460 - Taiwan Semiconductor Company

TSM3460 20V N-Channel MOSFET

TSM3460 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source www.DataSheet4U.com 20V N-Channel MOSFET w/ESD Protected VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =30mΩ (typ.) Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and elect.

Features

Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Specially designed for Li-ion battery packs. Battery switch application Block Diagram Ordering Information Part No. TSM3460CX6 Packing Tape & Reel 3,000/per reel Package SOT-26 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Ta = 25 C Ta = 70 oC Pulsed Drain Current, VGS @4.5V Diode Forward Current Maximum Power Dissipation Ta = 25 oC Ta = 70 oC Operating Junct.