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TSM250N02CX - Taiwan Semiconductor

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TSM250N02CX N-Channel Power MOSFET

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Features

it °C/W 1/5 Version: A14 TSM250N02CX 20V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS = 1.8V, ID = 2A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) 20 -- -- V -- 20 25 -- 27 35 mΩ -- 39 55 0.4 0.6 0.8 V Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Source Charge .

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