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it °C/W 1/5 Version: A14 TSM250N02CX 20V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS = 1.8V, ID = 2A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) 20 -- -- V -- 20 25 -- 27 35 mΩ -- 39 55 0.4 0.6 0.8 V Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Source Charge .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSM250N02D |
Taiwan Semiconductor |
Dual N-Channel Power MOSFET | |
2 | TSM250N02DCQ |
Taiwan Semiconductor |
Dual N-Channel Power MOSFET | |
3 | TSM25N03 |
Taiwan Semiconductor Company |
25V N-Channel MOSFET | |
4 | TSM200 |
SPSEMI |
Surface Mount Devices | |
5 | TSM200N03D |
Taiwan Semiconductor |
Dual N-Channel MOSFET | |
6 | TSM20N50 |
Taiwan Semiconductor |
500V N-Channel Power MOSFET | |
7 | TSM20N50CN |
Taiwan Semiconductor |
500V N-Channel Power MOSFET | |
8 | TSM210N02CX |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
9 | TSM210N06 |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
10 | TSM220NB06CR |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
11 | TSM221 |
STMicroelectronics |
DUAL CMOS RAIL TO RAIL OPERATIONAL AMPLIFIER AND DUAL CMOS COMPARATOR | |
12 | TSM2301 |
Taiwan Semiconductor Company |
20V P-Channel Enhancement Mode MOSFET |