TSM220NB06CR - Taiwan Semiconductor

TSM220NB06CR N-Channel Power MOSFET

TSM220NB06CR Taiwan Semiconductor N-Channel Power MOSFET 60V, 35A, 22mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating junction temperature ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22 m.

Features

● Low RDS(ON) to minimize conductive losses
● Low gate charge for fast power switching
● 100% UIS and Rg tested.
● 175°C Operating junction temperature
● RoHS Compliant
● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 22 mΩ Qg 21 nC APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● DC-DC converter
● Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-So.