TSM250N02DCQ - Taiwan Semiconductor

TSM250N02DCQ Dual N-Channel Power MOSFET

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Features

● Halogen-Free according to IEC 61249-2-21
● Suited for 1.8V drive applications
● Low profile package
● RoHS Compliant APPLICATION
● Battery Pack
● Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 20 V VGS = 4.5V 25 RDS(on) (max) VGS = 2.5V 35 mΩ VGS = 1.8V 55 Qg 7.7 nC TDFN 2x2 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C ID .