TSM200N03D - Taiwan Semiconductor

TSM200N03D Dual N-Channel MOSFET

only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness.

Features

● Fast switching
● 100% avalanche tested
● Pb-free plating
● RoHS compliant
● Halogen-free package APPLICATION
● Power Supply
● Motor COntrol Dual N-Channel MOSFET 30V, 20A, 20mΩ KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) VGS = -10V VGS = -4.5V Qg 30 20 30 4.1 V mΩ nC PDFN33 Dual Notes: Moisture sensitivity level: level 3. Per J-STD-020 Dual N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25.