TSM20N50 - Taiwan Semiconductor

TSM20N50 500V N-Channel Power MOSFET

The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode p.

Features

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● Low RDS(ON) 0.3Ω (Max.) Low gate charge typical @ 54nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM20N50CZ C0 TSM20N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current
* Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Storage .