TSM250N02CX |
Part Number | TSM250N02CX |
Manufacturer | Taiwan Semiconductor |
Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liabil... |
Features |
it °C/W
1/5 Version: A14
TSM250N02CX
20V N-Channel Power MOSFET
Electrical Specifications (TC = 25°C unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage
VGS = 0V, ID = 250µA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS = 1.8V, ID = 2A VDS = VGS, ID = 250µA
BVDSS RDS(on) VGS(TH)
20 -- -- V
-- 20 25 -- 27 35 mΩ
-- 39 55
0.4 0.6 0.8
V
Zero Gate Voltage Drain Current
Gate Body Leakage Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Source Charge ... |
Document |
TSM250N02CX Data Sheet
PDF 461.81KB |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | TSM250N02D |
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Dual N-Channel Power MOSFET | |
2 | TSM250N02DCQ |
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3 | TSM25N03 |
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4 | TSM200 |
SPSEMI |
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5 | TSM200N03D |
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