TSM210N06 - Taiwan Semiconductor

TSM210N06 N-Channel Power MOSFET

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Features

● Advanced Trench Technology
● Low RDS(ON) 3.1mΩ (Max.)
● Low gate charge typical @ 160nC (Typ.)
● Low Crss typical @ 300pF (Typ.) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Avalanche Current, L=0.3mH IAS, IAR Avalanche Energy, L=0.3mH EAS, EAR TC=25°C Maximum Power Dissipation TC=70°C .