This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V
• Low gate charge(typical 45nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS PD TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
Single Pulsed Avalanche Energy (L=0.4mH)
Power Dissipation (TC = 25℃) Operating and Storage Temperature R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF20N60MR |
Truesemi |
N-Channel MOSFET | |
2 | TSF20N60S |
Truesemi |
N-Channel MOSFET | |
3 | TSF20N65S |
Truesemi |
N-Channel MOSFET | |
4 | TSF204D00-S1 |
Token |
Saw Filters | |
5 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
7 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
9 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
10 | TSF20L100C |
INCHANGE |
Schottky Barrier Rectifier | |
11 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
12 | TSF20L150C |
Taiwan Semiconductor |
Trench Schottky Rectifier |