Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET i.
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSF20N60MR |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSF20N60S |
Truesemi |
N-Channel MOSFET |
|
| 3 | TSF20N50M |
Truesemi |
N-Channel MOSFET |
|
| 4 | TSF204D00-S1 |
Token |
Saw Filters |
|
| 5 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 6 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier |
|
| 7 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
|
| 8 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier |
|
| 9 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier |
|
| 10 | TSF20L100C |
INCHANGE |
Schottky Barrier Rectifier |
|
| 11 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|
| 12 | TSF20L150C |
Taiwan Semiconductor |
Trench Schottky Rectifier |
|