TSF20H120C - Taiwan Semiconductor

TSF20H120C Trench MOS Barrier Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20H100C AVERAGE FORWARD CURRENT (A) 10 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 Tj=25oC 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOL.

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.7 gram (approx.