Green compound RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG. 1 FORWARD CURRENT DERATING CURVE 25 20 15 10 WITH HEATSINK 5 3in x 5in x 0.25in Al-Plate 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20L100C .
- Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Packing code with suff.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF20L100C |
INCHANGE |
Schottky Barrier Rectifier | |
2 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
3 | TSF20L200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
4 | TSF204D00-S1 |
Token |
Saw Filters | |
5 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
7 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
9 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
10 | TSF20N50M |
Truesemi |
N-Channel MOSFET | |
11 | TSF20N60MR |
Truesemi |
N-Channel MOSFET | |
12 | TSF20N60S |
Truesemi |
N-Channel MOSFET |