Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. ABSOLUTE MAXIMUM RATINGS.
·Low Forward Voltage
·Low Power Loss/High Efficiency
·High Surge Capacity
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high frequency miniature switched mode power
supplies such as adapters, lighting and on-board DC/DC converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
100
V
IF(AV)
Average Rectified Forward Current
20
A
Peak forward surge current, 8.3ms single
IFSM
half sine-wave superimposed on rat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
2 | TSF20L150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
3 | TSF20L200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
4 | TSF204D00-S1 |
Token |
Saw Filters | |
5 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
7 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
8 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
9 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
10 | TSF20N50M |
Truesemi |
N-Channel MOSFET | |
11 | TSF20N60MR |
Truesemi |
N-Channel MOSFET | |
12 | TSF20N60S |
Truesemi |
N-Channel MOSFET |