TSF20N50M |
Part Number | TSF20N50M |
Manufacturer | Truesemi |
Description | This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching... |
Features |
• 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V • Low gate charge(typical 45nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (L=0.4mH) Power Dissipation (TC = 25℃) Operating and Storage Temperature R... |
Document |
TSF20N50M Data Sheet
PDF 526.90KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF20N60MR |
Truesemi |
N-Channel MOSFET | |
2 | TSF20N60S |
Truesemi |
N-Channel MOSFET | |
3 | TSF20N65S |
Truesemi |
N-Channel MOSFET | |
4 | TSF204D00-S1 |
Token |
Saw Filters | |
5 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier |