TSF2080C - Taiwan Semiconductor

TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD CURRENT (A) 10 TJ=125oC TJ=25oC 1 TJ=100oC 0.1 WITH HEATSINK 4in x 6in x 0.25in Al-Plate 125 150 0.01 0 0.

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unle.