TSF20H120C Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Datasheet, en stock, prix

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TSF20H120C

Taiwan Semiconductor
TSF20H120C
TSF20H120C TSF20H120C
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Part Number TSF20H120C
Manufacturer Taiwan Semiconductor
Description RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FO...
Features Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7 grams M...

Document Datasheet TSF20H120C Data Sheet
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