TPCS8102 - Toshiba Semiconductor

TPCS8102 Silicon P-Channel MOS Type Field Effect Transistor

TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = −10 µA (m.

Features

2a, Note 4) Channel temperature Storage temperature range Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-05-17 TPCS8102 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit °C/W °C/W Marking (Note 5) Type TPCS8102 Note 1: Please use devices on condition that the channel temperature is belo.