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TPCS8102 |
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| Part Number | TPCS8102 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPCS8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8102 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and ... |
| Features |
2a, Note 4) Channel temperature Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-17
TPCS8102
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit °C/W °C/W
Marking (Note 5)
Type
TPCS8102
Note 1: Please use devices on condition that the channel temperature is belo... |
| Document |
 TPCS8102 Data Sheet
PDF 392.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TPCS8101 |
Toshiba Semiconductor |
Silicon P-Channel MOS Type Field Effect Transistor |
|
| 2 | TPCS8104 |
Toshiba Semiconductor |
Silicon P-Channel MOS Type Field Effect Transistor |
|
| 3 | TPCS8105 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 4 | TPCS8004 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | TPCS8007-H |
Toshiba Semiconductor |
N-Channel MOSFET |
|