TPCS8205 - Toshiba Semiconductor

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS =.

Features

current Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) PD (1) 0.6 W Circuit Configuration PD (2) EAS IAR EAR Tch Tstg 0.35 32.5 5 0.05 150 −55~150 mJ A mJ °C °C Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-20 TPCS8205 Thermal Characteristics Characteristics Single-device opera.