TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8009-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.1 S (typ.) • Low leakage current: IDSS = 100 µA (max.
ext page. 150 150 ±20 2.1 8.4 1.5 0.6 3 2.1 0.15 150 −55~150 V V V A W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.036 g (typ.) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCS8004 |
Toshiba Semiconductor |
N-Channel MOSFET | |
2 | TPCS8007-H |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | TPCS8008-H |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | TPCS8101 |
Toshiba Semiconductor |
Silicon P-Channel MOS Type Field Effect Transistor | |
5 | TPCS8102 |
Toshiba Semiconductor |
Silicon P-Channel MOS Type Field Effect Transistor | |
6 | TPCS8104 |
Toshiba Semiconductor |
Silicon P-Channel MOS Type Field Effect Transistor | |
7 | TPCS8105 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | TPCS8201 |
Toshiba Semiconductor |
MOSFET | |
9 | TPCS8204 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) | |
10 | TPCS8205 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) | |
11 | TPCS8208 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | TPCS8209 |
Toshiba Semiconductor |
High performance/ Low Cost 20 pin OTP |