TPCS8004 - Toshiba Semiconductor

TPCS8004 N-Channel MOSFET

TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • .

Features

5 1.3 0.15 150 −55 to 150 V V V A W mJ A mJ °C °C JEDEC ― JEITA ― TOSHIBA 2-3R1B Weight: 0.035 g (typ.) Circuit Configuration 8765 Note 1, Note 2, Note 3 and Note 4: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1234 1 2009-09-29 Thermal Characteristics Characteristics Symbol Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) Rth (ch-a) Max 83.3 208 Unit °C/W °C/W Marking (Note 5) S8004 Part No. (or abbreviation code) TPCS8004 Lot N.