TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage cur.
3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0.6 W 0.35 Circuit Configuration 8 7 6 5 46.8 6 0.075 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-02-14 TPCS8204 Thermal Characteristics Characteristics Single-device op.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCS8201 |
Toshiba Semiconductor |
MOSFET | |
2 | TPCS8205 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) | |
3 | TPCS8208 |
Toshiba Semiconductor |
N-Channel MOSFET | |
4 | TPCS8209 |
Toshiba Semiconductor |
High performance/ Low Cost 20 pin OTP | |
5 | TPCS8209 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) | |
6 | TPCS8210 |
Toshiba Semiconductor |
SILICON N CHANNEL MOS TYPE LITHIUM BATTERY APPLICATIONS | |
7 | TPCS8211 |
Toshiba Semiconductor |
N-Channel MOSFET | |
8 | TPCS8212 |
Toshiba Semiconductor |
Silicon N Channel MOS Type (U-MOSIII) | |
9 | TPCS8213 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | TPCS8214 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | TPCS8004 |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | TPCS8007-H |
Toshiba Semiconductor |
N-Channel MOSFET |