TPCS8008-H - Toshiba Semiconductor

TPCS8008-H N-Channel MOSFET

TPCS8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8008-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • Low leakage current: IDSS = 100 μA (max.

Features

1.7 0.15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1.2.3. Source 4 Gate 5.6.7.8 Drain JEDEC ― JEITA ― TOSHIBA 2-3R1F Weight: 0.036 g (typ.) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconduct.