TPCA8019-H - TOSHIBA

TPCA8019-H MOSFET

TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCA8019-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 0.5±0.1 8 1.27 0.4±0.1 5 0.05 M A • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15..

Features

JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a) Drain power dissipation Drain power dissipation Weight: 0.069 g (typ.) Drain power dissipation (t = 10 s) (Note 2b) 1.6 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 263 45 3.4 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 2 3 3.5±0.2 Absolute Maximum Ratings (Ta = 25°C) 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the applic.